78 research outputs found
Real-Time Detection of Deoxyribonucleic Acid Bases via their Negative Differential Conductance Signature
In this paper we present a method for the real-time detection of the bases of
the deoxyribonucleic acid using their signatures in negative differential
conductance measurements. The present methods of electronic detection of
deoxyribonucleic acid bases are based on a statistical analysis because the
electrical currents of the four bases are weak and do not differ significantly
from one base to another. In contrast, we analyze a device that combines the
accumulated knowledge in nanopore and scanning tunneling detection, and which
is able to provide very distinctive electronic signatures for the four bases
Negative Differential Resistance of Electrons in Graphene Barrier
The graphene is a native two-dimensional crystal material consisting of a
single sheet of carbon atoms. In this unique one-atom-thick material, the
electron transport is ballistic and is described by a quantum relativistic-like
Dirac equation rather than by the Schrodinger equation. As a result, a graphene
barrier behaves very differently compared to a common semiconductor barrier. We
show that a single graphene barrier acts as a switch with a very high on-off
ratio and displays a significant differential negative resistance, which
promotes graphene as a key material in nanoelectronics
Berry Phase and Traversal Time in Asymmetric Graphene Structures
The Berry phase and the group-velocity-based traversal time have been
calculated for an asymmetric non-contacted or contacted graphene structure, and
significant differences have been observed compared to semiconductor
heterostructures. These differences are related to the specific, Dirac-like
evolution law of charge carriers in graphene, which introduces a new type of
asymmetry. When contacted with electrodes, the symmetry of the Dirac equation
is broken by the Schrodinger-type electrons in contacts, so that the Berry
phase and traversal time behavior in contacted and non-contacted graphene
differ significantly
Time Flow in Graphene and Its Implications on the Cutoff Frequency of Ballistic Graphene Devices
This manuscript deals with time flow in ballistic graphene devices. It is
commonly believed that in the ballistic regime the traversal time of carriers
in gated graphene at normal incidence is just the ratio of the length of the
device and the Fermi velocity. However, we show that the traversal time is much
slower if the influence of metallic contacts on graphene is considered. Even
the transmission at normal incidence becomes smaller than 1, contradicting yet
another common belief. These unexpected effects are due to the transformation
of Schrodinger electrons in the metallic contact into Dirac electrons in
graphene and vice versa. As a direct consequence of these transformations, the
ultimate performance of gated ballistic devices are much lower than expected,
in agreement with experimental results
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